2SJ244
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
–0.8
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source on State Resistance
vs. Temperature
Drain to Source on State Resistance
R
DS (on)
(Ω)
1.0
I
D
= –1 A
0.8
V
GS
= –2.5 V
–0.5 A
0.6
–0.5 A
I
D
= –1 A
V
GS
= –4 V
–1.0
–0.6
I
D
= –1 A
–0.4
–0.5 A
–0.2 A
–0.1 A
0.4
–0.2
0.2
Pulse Test
0
–25
0
25
50
75
100
0
0
–1
–2
–3
–4
–5
Gate to Source Voltage
V
GS
(V)
Case Temperature
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
2000
2000
1000
500
Switching Time vs. Drain Current
Reverse Recovery Time trr (ns)
Switching Time t (ns)
1000
500
td(off)
tf
tr
200
100
50
di / dt = 10 A /
µs
PW = 10
µs
20
–0.1 –0.2
–0.5
–1
–2
–5
–10
200
100
50
V
GS
= –4 V, V
DD
= –10 V
PW = 2
µs,
Duty Cycle = 1 %
20
–0.1 –0.2
–0.5
–1
–2
–5
–10
td(on)
Reverse Drain Current
I
DR
(A)
Drain Current
I
D
(A)
Dynamic Input Characteristics
V
DS
(V)
I
D
= –4 A
Pulse Test
–20
–5 V
V
DD
= –10 V
–8
Typical Capacitance vs.
Drain to Source Voltage
V
GS
(V)
–10
1000
500
Coss
–25
Drain to Source Voltage
Gate to Source Voltage
Capacitance C (pF)
–15
V
DS
–10
V
GS
–6
200
100
50
Ciss
–4
V
DD
= –10 V
Crss
V
GS
= 0
f = 1 MHz
–0.5
–1
–2
–5
–10
–5
–5 V
–2
20
10
–0.1 –0.2
0
0
2
4
6
8
10
0
Gate Charge
Qg (nc)
Drain to Source Voltage V
DS
(V)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
