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2SJ244 参数 Datasheet PDF下载

2SJ244图片预览
型号: 2SJ244
PDF下载: 下载PDF文件 查看货源
内容描述: 硅P沟道MOS场效应晶体管 [Silicon P Channel MOS FET]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 7 页 / 77 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SJ244
Main Characteristics
Maximum Channel Power Dissipation Curve
Channel Power Dissipation Pch (W)
(on the alumina ceramic board)
2.0
–10
PW = 1 ms (1 shot)
Maximum Safe Operation Area
1.5
I
D
(A)
–3
–1
–0.3
–0.1
–0.03
Operation in
this area is
limited by R
DS (on)
–1
–3
DC
n
tio
ra
pe
O
1.0
Drain Current
a
(T
=
)
°C
25
0.5
0
0
50
100
150
200
–0.01
–0.1 –0.3
–10
–30
–100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
(on the alumina ceramic board)
Typical Forward Transfer Characteristics
–5
Tc = –25°C
25°C
75°C
Typical Output Characteristics
–5
–5 V
–4.5 V
–4 V
–3.5 V
I
D
(A)
–4
–3 V
–3
I
D
(A)
Drain Current
Pulse Test
–4
–3
–2.5 V
Drain Current
–2
–2 V
–1
V
GS
= –1.5 V
0
0
–2
–4
–6
–8
–10
–2
–1
V
DS
= –5 V
Pulse Test
0
0
–1
–2
–3
–4
–5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
R
DS (on)
(Ω)
20
10
5
25°C
2
1
0.5
V
DS
= –5 V
Pulse Test
0.2
–0.1 –0.2
–0.5
–1
–2
–5
–10
75°C
Tc = –25°C
10
Drain to Source on State Resistance
vs. Drain Current
Pulse Test
5
2
1
0.5
–2 V
–3 V
V
GS
= –4 V
0.2
0.1
–0.1 –0.2
–0.5
–1
–2
–5
10
Drain Current I
D
(A)
Drain Current
I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6