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2SD1163 参数 Datasheet PDF下载

2SD1163图片预览
型号: 2SD1163
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散 [Silicon NPN Triple Diffused]
分类和应用:
文件页数/大小: 7 页 / 143 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SD1163, 2SD1163A
Maximum Collector Dissipation
Curve
60
Collector power dissipation P
C
(W)
50
30
Collector current I
C
(A)
10
3
1.0
0.3
2SD1163
0.01
0
50
100
Case temperature T
C
(°C)
150
10
Area of Safe Operation
(40 V, 20 A)
ure
ict
rP
Fo
40
20
(120 V, 0.9 A)
30
100
300
1,000
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
1.0
12
10 T
C
= 25°C
DC current transfer ratio h
FE
8
6
4
2 mA
I
B
= 0
0
6
8
10
2
4
Collector to emitter voltage V
CE
(V)
500
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 5 V
200
100
50
20
10
5
0.1
T
C
= 75°C
25°C
–25°C
g
cin
Ar
be
Tu
(150 V, 0.5 A)
2SD1163A
(350 V, 5 mA)
Collector current I
C
(A)
0.8
0.6
0.4
0.2
0.2
0.5 1.0
2
5
Collector current I
C
(A)
10