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2SD1163 参数 Datasheet PDF下载

2SD1163图片预览
型号: 2SD1163
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散 [Silicon NPN Triple Diffused]
分类和应用:
文件页数/大小: 7 页 / 143 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SD1163, 2SD1163A
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
I
C (surge)
P
C
*
1
Tj
Tstg
2SD1163
300
120
6
7
10
20
40
150
–55 to +150
2SD1163A
350
150
6
7
10
20
40
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SD1163
Item
Collector cutoff current
Symbol
I
CBO
Min
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
V
(BR)CEO
V
(BR)EBO
120
6
25
Typ
Max
5
2.0
1.2
0.5
2SD1163A
Min
150
6
25
Typ
Max
5
1.0
1.2
0.5
V
V
µs
Unit
mA
mA
V
V
Test conditions
V
CB
= 300 V, I
E
= 0
V
CB
= 350 V, I
E
= 0
I
C
= 10 mA, R
BE
=
I
E
= 10 mA, I
C
= 0
V
CE
= 5 V, I
C
= 5 A*
1
I
C
= 5 A, I
B
= 0.5 A*
1
I
C
= 5 A, I
B
= 0.5 A*
1
I
CP
= 3.5 A,
I
B1
= 0.45 A
DC current transfer ratio h
FE
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
Fall time
Note:
1. Pulse test.
V
CE (sat)
V
BE (sat)
t
f