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2SC4226-T1 参数 Datasheet PDF下载

2SC4226-T1图片预览
型号: 2SC4226-T1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频晶体管NPN外延硅晶体管RF高频低噪声放大3针超级Minimold [NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold]
分类和应用: 晶体晶体管射频光电二极管放大器
文件页数/大小: 8 页 / 149 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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PreliminaryData
Sheet
2SC4226
R09DS0022EJ0200
NPN Silicon RF Transistor
Rev.2.00
Jun 29, 2011
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
package.
FEATURES
• Low noise : NF = 1.2 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
• High gain :
⏐S
21e
2
= 9 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
• 3-pin super minimold package
<R>
ORDERING INFORMATION
Part Number
2SC4226
2SC4226-T1
Order Number
2SC4226-A
2SC4226-T1-A
Package
3-pin super
Minimold
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3
100
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
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