2SC3357
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
Total Power Dissipation P
tot
(W)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
f = 1 MHz
2
Ceramic substrate
16 cm
2
×
0.7 mm (t)
1
1
0.5
Free air R
th (j-a)
312.5˚C/W
0
25
50
75
100
125
150
0.3
0.2
0.5
1
2
5
10
20 30
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
V
CE
= 10 V
5
3
2
1
0.5
0.3
0.2
0.1
0.1
V
CE
= 10 V
100
DC Current Gain h
FE
50
20
10
0.5
1
5
10
50
0.5
1
5
10
50 100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
15
Insertion Power Gain |S
21e
|
2
(dB)
25
MAG
20
|S
21e
|
2
15
V
CE
= 10 V
f = 1 GHz
10
10
5
5
V
CE
= 10 V
I
C
= 20 mA
0
0.05
0.1
0.2
0.5
1
2
0
0.5
1
5
10
50 70
Frequency f (GHz)
Collector Current I
C
(mA)
Data Sheet PU10211EJ01V0DS
3
RENESAS [ RENESAS TECHNOLOGY CORP ]
