2SC3357
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
R
th (j-a)
Note
Value
62.5
Unit
°C/W
2
Note
Mounted on 16 cm
×
0.7 mm (t) ceramic substrate
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
f
T
S
21e
2
NF
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1.0 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 20 mA
–
–
50
–
–
120
1.0
1.0
250
µ
A
µ
A
–
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 40 mA, f = 1 GHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
–
–
–
–
–
6.5
9.0
1.1
1.8
0.65
–
–
–
3.0
1.0
GHz
dB
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
The emitter terminal and the case shall be connected to the guard terminal of the three-terminal
capacitance bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
RH
RH
50 to 100
RF
RF
80 to 160
RE
RE
125 to 250
2
Data Sheet PU10211EJ01V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
