欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC3356-A 参数 Datasheet PDF下载

2SC3356-A图片预览
型号: 2SC3356-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管RF [NPN Silicon RF Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 9 页 / 189 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SC3356-A的Datasheet PDF文件第1页浏览型号2SC3356-A的Datasheet PDF文件第2页浏览型号2SC3356-A的Datasheet PDF文件第4页浏览型号2SC3356-A的Datasheet PDF文件第5页浏览型号2SC3356-A的Datasheet PDF文件第6页浏览型号2SC3356-A的Datasheet PDF文件第7页浏览型号2SC3356-A的Datasheet PDF文件第8页浏览型号2SC3356-A的Datasheet PDF文件第9页  
2SC3356  
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
2
250  
200  
150  
100  
50  
f = 1 MHz  
Free air  
1
0.5  
0.3  
0
25  
50  
75  
100  
125  
(˚C)  
150  
50  
2
0.2  
0.5  
1
2
5
10  
20 30  
Ambient Temperature T  
A
Collector to Base Voltage VCB (V)  
DC CURRENT GAIN vs.  
COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
200  
100  
50  
10  
5
V
CE = 10 V  
V
CE = 10 V  
2
1
0.5  
20  
10  
0.2  
0.1  
0.5  
1
5
10  
(mA)  
0.1  
0.5  
1
5
10  
(mA)  
50 100  
Collector Current I  
C
Collector Current I  
C
INSERTION POWER GAIN, MAG  
vs. FREQUENCY  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
25  
20  
15  
10  
15  
10  
V
CE = 10 V  
f = 1 GHz  
MAG  
2
|S21e  
|
5
0
5
0
V
CE = 10 V  
= 20 mA  
I
C
0.05  
0.1  
0.2  
0.5  
1
0.5  
1
5
10  
50 70  
Frequency f (GHz)  
Collector Current I  
C
(mA)  
Remark The graphs indicate nominal characteristics.  
R09DS0021EJ0300 Rev.3.00  
Jun 28, 2011  
Page 3 of 7  
 复制成功!