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2SC3356-A 参数 Datasheet PDF下载

2SC3356-A图片预览
型号: 2SC3356-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管RF [NPN Silicon RF Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 9 页 / 189 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SC3356  
ELECTRICAL CHARACTERISTICS (TA = +25°C)  
Parameter  
DC Characteristics  
Symbol  
Test Conditions  
MIN.  
TYP.  
MAX.  
Unit  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 10 V, IE = 0  
1.0  
1.0  
μA  
μA  
VEB = 1.0 V, IC = 0  
Note 1  
hFE  
VCE = 10 V, IC = 20 mA  
50  
120  
250  
RF Characteristics  
Gain Bandwidth Product  
Insertion Power Gain  
Noise Figure  
fT  
VCE = 10 V, IC = 20 mA  
7
GHz  
dB  
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz  
11.5  
1.1  
NF  
VCE = 10 V, IC = 7 mA, f = 1 GHz  
VCB = 10 V, IE = 0, f = 1 MHz  
2.0  
1.0  
dB  
Note 2  
Reverse Transfer Capacitance  
Cre  
0.55  
pF  
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
<R>  
hFE CLASSIFICATION  
Rank  
Q/YQ  
R23  
R/YR  
R24  
S/YS  
R25  
Marking  
hFE Value  
50 to 100  
80 to 160  
125 to 250  
R09DS0021EJ0300 Rev.3.00  
Jun 28, 2011  
Page 2 of 7  
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