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2SC2619 参数 Datasheet PDF下载

2SC2619图片预览
型号: 2SC2619
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延 [Silicon NPN Epitaxial]
分类和应用:
文件页数/大小: 9 页 / 193 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SC2619
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f
T
(MHz)
500
V
CE
= 6 V
Noise Figure vs. Signal Source Resistance
12
10
8
6
4
2
0
10
20
50
100
200
500 1000
V
CE
= 6 V
I
C
= 1 mA
f = 100 MHz
Noise Figure NF (dB)
400
300
200
100
0
0.1
0.3
1.0
3
10
30
Signal Source Resistance R
g
(Ω)
Gain Bandwidth Product vs.
Collector to Emitter Voltage
Gain Bandwidth Product f
T
(MHz)
400
I
C
= 1 mA
300
Collector Current IC (mA)
Input/Output Admittance vs.
Collector to Emitter Voltage
Percentage of Relative to V
CE
= 6 V (%)
500
b
oe
g
oe
g
ie
g
oe
b
ie
b
oe
I
C
= 1 mA
f = 455 kHz
200
b
ie
g
ie
100
50
200
100
20
10
1
2
5
10
20
50
0
1
2
5
10
20
Collector to Emitter Volgage V
CE
(V)
Input/Output Admittance vs.
Collector Current
Percentage of Relative to V
CE
= 6 V (%)
Percentage of Relative to I
E
= 1 mA (%)
500
V
CE
= 6 V
f = 455 kHz
200
b
ie
100
b
oe
50
b
ie
g
ie
20
10
0.1
g
oe
0.2
0.5
1.0
2
5
b
oe
g
ie
g
oe
500
Collector to Emitter Voltage V
CE
(V)
Transfer Admittance vs.
Collector to Emitter Voltage
I
C
= 1 mA
f = 455 kHz
200
b
fe
100 g
fe
50
b
re
g
fe
b
fe
b
re
20
10
1
2
5
10
20
50
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
Rev.2.00 Aug 10, 2005 page 4 of 8