欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC2619 参数 Datasheet PDF下载

2SC2619图片预览
型号: 2SC2619
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延 [Silicon NPN Epitaxial]
分类和应用:
文件页数/大小: 9 页 / 193 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SC2619的Datasheet PDF文件第1页浏览型号2SC2619的Datasheet PDF文件第3页浏览型号2SC2619的Datasheet PDF文件第4页浏览型号2SC2619的Datasheet PDF文件第5页浏览型号2SC2619的Datasheet PDF文件第6页浏览型号2SC2619的Datasheet PDF文件第7页浏览型号2SC2619的Datasheet PDF文件第8页浏览型号2SC2619的Datasheet PDF文件第9页  
2SC2619
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE
f
T
Cob
NF
Min
30
30
5
60
Typ
230
5.0
Max
0.5
0.5
200
1.1
0.75
3.5
Unit
V
V
V
µA
µA
V
V
MHz
pF
dB
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
C
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
C
= 2 mA,
f = 1 MHz, R
g
= 500
Note: 1. The 2SC2619 is grouped by h
FE
as follows.
Grade
B
C
Mark
FB
FC
h
FE
60 to 120
100 to 200
Rev.2.00 Aug 10, 2005 page 2 of 8