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2SC2334 参数 Datasheet PDF下载

2SC2334图片预览
型号: 2SC2334
PDF下载: 下载PDF文件 查看货源
内容描述: 硅功率晶体管 [SILICON POWER TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 233 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SC2334
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)1
V
CEX(SUS)2
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
Emitter cutoff current
DC current gain
I
EBO
h
FE1
h
FE2
h
FE3
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
Conditions
I
C
= 5.0 A, I
B1
= 0.5 A, L = 1 mH
I
C
= 5.0 A, I
B1
=
−I
B2
= 0.5 A,
V
BE(OFF)
=
−5.0
V, L = 180
µ
H, clamped
I
C
= 10 A, I
B1
= 1.0 A, I
B2
=
−0.5
A,
V
BE(OFF)
=
−5.0
V, L = 180
µ
H, clamped
V
CB
= 100 V, I
E
= 0 A
V
CE
= 100 V, R
BE
= 51
Ω,
T
A
= 125°C
V
CE
= 100 V, V
BE(OFF)
=
−1.5
V
V
CE
= 100 V, V
BE(OFF)
=
−1.5
V,
T
A
= 125°C
V
EB
= 5.0 V, I
C
= 0 A
V
CE
= 5.0 V, I
C
= 0.5 A
V
CE
= 5.0 V, I
C
= 3.0 A
V
CE
= 5.0 V, I
C
= 5.0 A
I
C
= 5.0 A, I
B
= 0.5 A
I
C
= 5.0 A, I
B
= 0.5 A
Note
Note
Note
MIN.
100
100
100
TYP.
MAX.
Unit
V
V
V
10
1.0
10
1.0
10
40
40
20
0.6
1.5
0.5
1.5
0.5
200
µ
A
mA
µ
A
mA
µ
A
Note
Note
V
V
I
C
= 5.0 A, R
L
= 10
Ω,
I
B1
=
−I
B2
=
−0.5
A, V
CC
50 V
Refer to the test circuit.
µ
s
µ
s
µ
s
Note
Pulse test PW
350
µ
s, duty cycle
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
40 to 80
L
60 to 120
K
100 to 200
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D14902EJ2V1DS