DATA SHEET
SILICON POWER TRANSISTOR
2SC2334
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC2334 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
ORDERING INFORMATION
Part No.
2SC2334
Package
TO-220AB
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SA1010
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25°C
T
A
= 25°C
PW
≤
300
µ
s,
duty cycle
≤
10%
Conditions
Ratings
150
100
7.0
7.0
15
3.5
40
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14902EJ2V1DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2002
RENESAS [ RENESAS TECHNOLOGY CORP ]
