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2SC1906 参数 Datasheet PDF下载

2SC1906图片预览
型号: 2SC1906
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面 [Silicon NPN Epitaxial Planar]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管
文件页数/大小: 7 页 / 169 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SC1906
Base Time Constant vs.
Collector Currnt
200
12
Input Admittance vs. Frequency
I
C
= 1 mA
10
8
6
4
2
100
2 mA 4 mA 8 mA
200
12 mA
250
Base time Constant r
bb'
•C
C
(ps)
100
50
20
10
5
Input Suceptance b
ie
(mS)
V
CB
= 10 V
f = 31.8 MHz
50
f = 25 MHz
y
ie
= g
ie
+jb
ie
V
CE
= 9 V
2
0.1
0.2
0.5
1.0
2
5
10
0
2
4
6
8
10
12
Collector Current I
C
(mA)
Input Conductance g
ie
(mS)
Reverse Transfer Admittance vs.
Frequency
Reverse Transfer Suceptance b
re
(mS)
0
y
re
= g
re
+jb
re
V
CE
= 9 V
f = 25 MHz
50
100
Output Admittance vs. Frequency
6
Output Suceptance b
oe
(mS)
5
4
3
2
100
1
50
f = 25 MHz
0
0.2
0.4
0.6
I
C
= 1 mA 2
4
8
200
12
250
–0.4
–0.8
200
250
I
C
= 21 mA 8
–1.2
y
oe
= g
oe
+jb
oe
V
CE
= 9 V
4
2
1
–1.6
0.8
1.0
1.2
–2.0
–0.10
–0.08 –0.06
–0.04
–0.02
0
Output Conductance g
oe
(mS)
Forward Transfer Admittance vs.
Frequency
Forward Transfer Suceptance b
fe
(mS)
20
0
–20
–40
–60
25f =
–80
–100
–120
0
20
40
60
80
100 120 140
Reverse Transfer Conductance g
re
(mS)
Conversion Gain vs. Local Oscillating
Injection Voltage
17
I
C
= 1 mA
2
Conversion Gain CG (dB)
y
fe
= g
fe
+jb
fe
V
CE
= 9 V
4
16
15
14
13
12
11
10
0
0.1
0.2
0.3
V
CB
= 9 V
I
E
= 3.5 mA
f
s
= 200 MHz
f
osc
= 245 MHz
f
IF
= 45 MHz
Emitter Inject
MH
z
2
00
8
15
0
100
80
50
12
25
Forward Transfer Conductance g
fe
(mS)
Injection Voltage V
inj
(V)
Rev.2.00 Aug 10, 2005 page 4 of 6