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2SC1906 参数 Datasheet PDF下载

2SC1906图片预览
型号: 2SC1906
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面 [Silicon NPN Epitaxial Planar]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管
文件页数/大小: 7 页 / 169 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SC1906
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
300
20
Typical Output Characteristics
P
C
180
=
Collector Current I
C
(mA)
160
140
30
0
16
m
W
200
120
12
100
8
80
60
100
4
40
I
B
= 20
µA
0
50
100
150
0
4
8
12
16
20
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
120
Typical Transfer Characteristics
20
DC Current Transfer Ratio h
FE
Collector Current I
C
(mA)
16
V
CE
= 10 V
100
80
60
40
20
V
CE
= 10 V
12
8
4
0
0.2
0.4
0.6
0.8
1.0
0
0.1 0.2
0.5 1.0 2
5 10 20
50 100
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f
T
(MHz)
1,200
1,000
800
600
400
200
0
0.1
V
CE
= 10 V
f = 100 MHz
Gain Bandwidth Product Curve
20
700
800
Collector Current I
C
(mA)
90
0
16
12
f
T
=
0
1,0
0M
Hz
8
4
600
500
0
4
8
12
16
20
0.3
1.0
3
10
30
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Rev.2.00 Aug 10, 2005 page 3 of 6