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2SA1193KTZ-E 参数 Datasheet PDF下载

2SA1193KTZ-E图片预览
型号: 2SA1193KTZ-E
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延,达林顿 [Silicon PNP Epitaxial, Darlington]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 162 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1193KTZ-E的Datasheet PDF文件第1页浏览型号2SA1193KTZ-E的Datasheet PDF文件第2页浏览型号2SA1193KTZ-E的Datasheet PDF文件第4页浏览型号2SA1193KTZ-E的Datasheet PDF文件第5页浏览型号2SA1193KTZ-E的Datasheet PDF文件第6页  
2SA1193(K)
Main Characteristics
Maximum Collector Dissipation Curve
Collector power dissipation P
C
(W)
0.9
–3
Area of Safe Operation
PW
Collector current I
C
(A)
–1.0
–0.3
–0.1
–0.03
–0.01
i
C (peak)
I
C max
=1
=1
0m
PW
t
ho
1 s
sh o t
ot
ms
s 1
1 sh
ms
00
0.6
Ta = 25°C
PW
=1
0.3
0
50
100
150
–0.003
–3
–10
–30
–100
–300
Ambient Temperature Ta (°C)
Collector to Emiter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
100,000
Typical Output Characteristics
–500
00
1
80
0
6
Collector current I
C
(mA)
DC Current transfer ratio h
FE
–400
30,000
10,000
3,000
1,000
300
100
–10
Ta = 75
°C
25
°C
40
–300
P
C
=
20
0.
9W
–200
–10
–100
–5
µA
I
B
= 0
0
–2
–4
–6
–8
–10
V
CE
= –3 V
Pulse
–30
–100
–300
–1,000
Collector to Emitter Voltage V
CE
(V)
Saturation Voltage vs.
Collector Current
–10
I
C
= 500 I
B
Pulse
–3
10
3
1.0
Collector Current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
Switching Time vs. Collector Current
Switching time t (µs)
Ta = 25°C
V
BE(sat)
t
off
t
stg
–1.0
V
CE(sat)
–0.3
75°C
0.3
0.1
0.03
I
C
= 500 I
B
Ta = 25°C
–30
–100
t
on
t
d
–0.1
–10
–30
–100
–300
–1,000
0.01
–10
–300
–1,000
Collector Current I
C
(mA)
Collector Curret I
C
(mA)
Rev.2.00 Aug 10, 2005 page 3 of 5