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2SA1193KTZ-E 参数 Datasheet PDF下载

2SA1193KTZ-E图片预览
型号: 2SA1193KTZ-E
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延,达林顿 [Silicon PNP Epitaxial, Darlington]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 162 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1193KTZ-E的Datasheet PDF文件第1页浏览型号2SA1193KTZ-E的Datasheet PDF文件第3页浏览型号2SA1193KTZ-E的Datasheet PDF文件第4页浏览型号2SA1193KTZ-E的Datasheet PDF文件第5页浏览型号2SA1193KTZ-E的Datasheet PDF文件第6页  
2SA1193(K)  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)CEO  
ICBO  
Min  
–60  
Typ  
Max  
Unit  
V
Test conditions  
Collector to emitter breakdown voltage  
Collector cutoff current  
Emitter cutoff current  
IC = –1 mA, RBE =  
–1.0  
–1.0  
µA  
µA  
VCB = –60 V, IE = 0  
IEBO  
VEB = –7 V, IC = 0  
DC current transfer ratio  
Collector to emitter saturation voltage  
Base to emitter saturation voltage  
Turn on time  
hFE  
2000  
VCE = –3 V, IC = –250 mA*1  
IC = –250 mA, IB = –0.5 mA*1  
VCE(sat)  
VBE(sat)  
ton  
–1.5  
–2.0  
V
V
0.3  
0.9  
µs  
µs  
IC = –250 mA  
Turn off time  
toff  
IB1 = –IB2 = –0.5 mA  
Note: 1. Pulse test  
Rev.2.00 Aug 10, 2005 page 2 of 5