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2SA1190ETZ-E 参数 Datasheet PDF下载

2SA1190ETZ-E图片预览
型号: 2SA1190ETZ-E
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 180 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SA1190
Collector Output Capacitance vs.
Collector to Base Voltage
Collector output capacitance C
ob
(pF)
100
f = 1 MHz
I
E
= 0
30
Noise voltage referred to input e
n
(nV/
Hz)
Noise Voltage referred to Input vs.
Collector Current
10
V
CE
= –6 V
Rg = 0
f = 1 kHz
3
10
1.0
3
0.3
1
–1
–3
–10
–30
–100
0.1
–0.1
–0.3
–1.0
–3
–10
Collector to Base Voltage V
CB
(V)
Noise Voltage referred to Input vs.
Signal Source Resistance
1,000
V
CE
= –6 V
f = 1 kHz
100
I
C
= –10 mA
10
–1
–0.1
Collector Current I
C
(mA)
Noise Voltage referred to Input vs.
Collector to Emitter Voltage
1.0
Noise voltage referred to input e
n
(nV/
Hz)
Noise voltage referred to input e
n
(nV/
Hz)
0.9
0.8
0.7
1.0
0.6
I
C
= –1 mA
Rg = 0
f = 1 kHz
–3
–10
–30
–100
0.1
10
100
1k
10 k
100 k
0.5
–1
Signal Source Resistance R
g
(Ω)
Noise Voltage referred to Input vs.
Frequency
2.0
V
CE
= –6 V
Rg = 0
Collector to Emitter Voltage V
CE
(V)
Noise voltage referred to input e
n
(nV/
Hz)
1.6
1.2
I
C
= –1 mA
–10
0.4
0.8
0
10
100
1k
10 k
100 k
Frequency f (Hz)
Rev.2.00 Aug 10, 2005 page 5 of 6