2SA1190
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
f
T
Cob
NF
Min
–90
–90
–5
—
—
250
—
—
—
—
—
2SA1190
Typ
Max
—
—
—
—
—
—
—
–0.1
—
–0.1
—
800
–0.05
–0.7
130
3.2
0.15
–0.15
–1.0
—
—
1.5
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
2
I
C
= –2 mA*
V
V
MHz
pF
dB
I
C
= –10 mA,
2
I
B
= –1 mA*
V
CE
= –6 V,
I
C
= –10 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –6 V,
I
C
= –0.1 mA,
R
g
= 10 kΩ
f = 1 kHz
V
CE
= –6 V,
I
C
= –0.1 mA,
R
g
= 10 kΩ
f = 10 Hz
V
CB
= –6 V,
I
C
= –10 mA,
Rg = 0, f = 1 kHz
—
0.2
2.0
dB
Noise voltage referred to input
e
n
—
0.7
—
nV/
√Hz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by h
FE
as follows.
2. Pulse test
D
E
250 to 500
400 to 800
Rev.2.00 Aug 10, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
