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2SA1188 参数 Datasheet PDF下载

2SA1188图片预览
型号: 2SA1188
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 7 页 / 172 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SA1188
Emitter Cutoff Current vs.
Emitter to Base Voltage
–1,000
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
Collector to emitter breakdown voltage
V
(BR) CER
(V)
–190
Typical Value
I
C
= –1 mA
Emitter cutoff current I
EBO
(pA)
I
C
= 0
Ta = 75°C
–100
–180
–170
–10
25
–1.0
–25
–160
–150
–0.1
0
–2
–4
–6
–8
–10
–140
10
100
1k
10 k
100 k
Emitter to Base Voltage V
EB
(V)
DC Current Transfer Ratio vs.
Collector Current
Collector to emitter saturation voltage
V
CE (sat)
(V)
1,000
Base to Emitter Resistance R
BE
(Ω)
Collector to Emitter Saturation Voltage vs.
Collector Current
–1.0
I
C
= 10 I
B
Pulse
–0.3
DC current transfer ratio h
FE
Ta = 75°C
300
–25
25
100
–0.1
Ta = 75°C
–25
30
V
CE
= –12 V
Pulse
10
–1
–3
–10
–30
–100
–0.03
25
–0.01
–1
–3
–10
–30
–100
Collector Current I
C
(mA)
Base to Emitter Saturation Voltage vs.
Collector Current
I
C
= 10 I
B
Pulse
–3
Collector Current I
C
(mA)
Gain Bandwidth Product vs.
Collector Current
Gain bandwidth product f
T
(MHz)
1,000
V
CE
= –6 V
Base to emitter saturation voltage
V
BE (sat)
(V)
–10
500
200
100
50
–1.0
25
Ta = –25°C
75
–0.3
20
10
–0.5 –1.0
–0.1
–1
–3
–10
–30
–100
–2
–5
–10 –20
–50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Rev.3.00 Aug 10, 2005 page 4 of 6