2SA1188
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
–90
–90
–5
Typ
—
Max
—
Unit
V
Test conditions
IC = –10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
—
—
V
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
VCB = –70 V, IE = 0
VEB = –2 V, IC = 0
—
—
V
—
—
–0.1
–0.1
800
µA
µA
Emitter cutoff current
IEBO
—
—
1
DC current trnsfer ratio
hFE
*
250
—
VCE = –12 V,
IC = –2 mA*2
Collector to emitter saturation voltage
VCE(sat)
—
–0.05
–0.15
V
V
IC = –10 mA,
IB = –1 mA*2
Base to emitter saturation voltage
Gain bandwidth product
VBE(sat)
fT
—
—
–0.7
130
–1.0
—
MHz VCE = –6 V,
IC = –10 mA
Collector output capacitance
Cob
—
3.2
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SA1188 is grouped by hFE as follows.
2. Pulse test
D
E
250 to 500
400 to 800
Rev.3.00 Aug 10, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
