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2SA1122CCTL-E 参数 Datasheet PDF下载

2SA1122CCTL-E图片预览
型号: 2SA1122CCTL-E
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 158 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1122CCTL-E的Datasheet PDF文件第1页浏览型号2SA1122CCTL-E的Datasheet PDF文件第2页浏览型号2SA1122CCTL-E的Datasheet PDF文件第4页浏览型号2SA1122CCTL-E的Datasheet PDF文件第5页  
2SA1122
Main Characteristics
Maximum Collector Dissipation Curve
Typical Output Characteristics
–10
–30
–25
–20
Collector power dissipation Pc (mW)
150
Collector Current I
C
(mA)
–8
100
–6
–15
–4
50
–10
–5
µA
I
B
= 0
–2
0
50
100
150
0
–2
–4
–6
–8
–10
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
10,000
Typical Transfer Characteristics
–100 m
–50 m V
CE
= –12 V
DC current transfer ratio h
FE
Collector Current I
C
(A)
–20 m
–10 m
–5 m
–2 m
–1 m
–500
µ
–200
µ
–100
µ
–50
µ
–20
µ
–10
µ
V
CE
= –12 V
1,000
100
0 –0.2 –0.4 –0.6 –0.8 –1.0
10
–10
µ
–100
µ
–1 m
–10 m
–50 m
Base to Emitter Voltage V
BE
(V)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Current I
C
(A)
Collector output capacitance C
ob
(pF)
50
f = 1 MHz
I
E
= 0
20
10
5
2
1
–1
–2
–5
–10
–20
–50
Collector to Base Voltage V
CB
(V)
Rev.2.00 Aug 10, 2005 page 3 of 4