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2SA1122CCTL-E 参数 Datasheet PDF下载

2SA1122CCTL-E图片预览
型号: 2SA1122CCTL-E
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 158 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1122CCTL-E的Datasheet PDF文件第1页浏览型号2SA1122CCTL-E的Datasheet PDF文件第3页浏览型号2SA1122CCTL-E的Datasheet PDF文件第4页浏览型号2SA1122CCTL-E的Datasheet PDF文件第5页  
2SA1122  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
–55  
–55  
–5  
Typ  
Max  
Unit  
V
Test conditions  
IC = –10 µA, IE = 0  
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Emitter to base breakdown voltage  
Collector cutoff current  
V
IC = –1 mA, RBE = ∞  
IE = –10 µA, IC = 0  
V
–0.5  
–0.5  
500  
–0.5  
–0.75  
µA  
µA  
VCB = –30 V, IE = 0  
Emitter cutoff current  
IEBO  
VEB = –2 V, IC = 0  
1
DC current transfer ratio  
hFE  
*
160  
VCE = –12 V, IC = –2 mA  
IC = –10 mA, IB = –1 mA  
VCE = –12 V, IC = –2 mA  
Collector to emitter saturation voltage  
Base to emitter voltage  
VCE(sat)  
VBE  
V
V
Note: 1. The 2SA1122 is grouped by hFE as follows.  
Grade  
Mark  
hFE  
C
CC  
D
CD  
160 to 320  
250 to 500  
Rev.2.00 Aug 10, 2005 page 2 of 4