ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1) (I C = 1.0mAdc, I B =0)
Collector-Base Breakdown Voltage (I C = 100 uAdc, IE = 0)
Emitter-Base Breakdown Voltage (I E = 10 uAdc, IC = 0)
Collector Cutoff Current (V CB = 100Vdc, I E = 0)
(V CB = 100Vdc, I E = 0, T A = 100 C)
Emitter Cutoff Current (V EB = 4.0Vdc, I C = 0)
O
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
I EBO
140
160
6.0
-
-
-
-
-
-
100
100
50
Vdc
Vdc
Vdc
nAdc
uAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (I C = 1.0mAdc, V CE = 5.0Vdc)
(I C = 10mAdc, V CE = 5.0Vdc)
(I C = 50mAdc, V CE = 5.0Vdc)
Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc)
Note: Pluse Test : Pluse Width = 300mS, Duty Cycle = 2.0%
hFE
60
60
20
-
-
-
-
-
250
-
0.15
0.25
1.0
1.2
-
VCE(sat)
Vdc
VBE(sat)
Vdc
RECTRON [ RECTRON SEMICONDUCTOR ]
