MMBT5550
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
P
CM
:
0.225 W(Tamb=25
O
C)
* Collector current
I
CM
:
0.6 A
* Collector-base voltage
V
(BR)CBO
: 160 V
* Operating and storage junction temperature range
T
J
,T
stg
:
-55
O
C to + 150
O
C
SOT-23
COLLECTOR
3
MECHANICA DATA
*Case: Molded plastic
*Epoxy: UL 94V-O rate flame retardant
*Lead: MIL-STD-202E method 208C guaranteed
*Mounting position: Any
*Weight: 0.008 gram
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.019(2.00)
0.071(1.80)
1
3
0.110(2.80)
2
0.118(3.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@ T
A
= 25
O
C unless otherwise noted)
RATINGS
Max. Steady State Power Dissipation (1) @T
A
=25
o
C
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
P
D
T
J
T
STG
VALUE
225
150
-55 to +150
UNITS
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
(@ T
A
= 25
O
C unless otherwise noted)
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Notes : 1. Alumina=0.4*0.3*0.024 in. 99.5% alumina.
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
SYMBOL
R
QJA
MIN.
-
TYP.
-
MAX.
417
UNITS
o
C/W
2007-5
RECTRON [ RECTRON SEMICONDUCTOR ]
