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WM71016-NBSD-DA 参数 Datasheet PDF下载

WM71016-NBSD-DA图片预览
型号: WM71016-NBSD-DA
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory Circuit, PDSO8, 3 X 3 MM, 0.65 MM PITCH, GREEN, UDFN-8]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 17 页 / 1898 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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WM710xx – Secure F-RAM with Gen-2 RFID  
SPECIFICATIONS  
WM710xx’s RFID Interface conforms to the Specification for RFID Air Interface EPC Class-1 Generation-2 UHF  
RFID Protocol for Communications at 860 MHz – 960 MHz, Version 1.2.0.  
Options and Exceptions are noted here:  
State Persistence Requirements  
WM710xx features infinite state retention for S1, S2, S3, and SL State flags. State flag S0 has no persistence  
and will always return to state ‘A’ upon a power cycle.  
ELECTRICAL SPECIFICATIONS  
A
BSOLUTE MAXIMUM RATINGS  
Symbol  
TSTG  
TOP  
Description  
Storage Temperature  
Operating Temperature  
Ratings  
-55°C to + 125°C  
-40oC to +85oC  
TLEAD  
Lead Temperature (Soldering, 10 seconds)  
Electrostatic Discharge Voltage  
260° C  
- Human Body Model (JEDEC Std JESD22-A114-B)  
- Charged Device Model (JEDEC Std JESD22-C101-A)  
- Machine Model (JEDEC Std JESD22-A115-A)  
Memory Endurance: Read or Write or Erase  
TBD  
TBD  
VESD  
TBD  
ME  
1x1014  
+10dBm  
RFexp  
RF Exposure  
(800 ~ 1000 MHz)  
Package Moisture Sensitivity Level  
MSL-2  
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating  
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this  
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.  
AC Operating Characteristics (TA = -40° C to + 85° C unless otherwise specified)  
Symbol Parameter  
Min  
Typ  
Max  
Units  
dBm  
dBm  
Kbits/s  
Kbits/s  
ms  
Notes  
SR  
SW  
Fr  
Read Sensitivity  
-6  
-6  
Write Sensitivity  
Max Sustainable Read Rate @ SR  
Max Sustainable Write Rate @ Sw  
Power-on time  
Change in Modulator Reflection  
Coefficient  
640  
160  
2
Fw  
tST  
∆ Γ  
TBD  
TBD  
ZIN  
Input Impedance @ fIN=915MHz  
63 – j199  
Ohms  
Rev. 1.2  
Sept. 2010  
Page 13 of 17  
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