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FM25V02 参数 Datasheet PDF下载

FM25V02图片预览
型号: FM25V02
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kb的3V串行F-RAM存储器 [256Kb Serial 3V F-RAM Memory]
分类和应用: 存储
文件页数/大小: 17 页 / 338 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM25V02 - 256Kb SPI FRAM  
Electrical Specifications  
Absolute Maximum Ratings  
Symbol  
VDD  
Description  
Ratings  
-1.0V to +4.5V  
-1.0V to +4.5V  
and VIN < VDD+1.0V  
-55°C to + 125°C  
260° C  
Power Supply Voltage with respect to VSS  
Voltage on any pin with respect to VSS  
VIN  
TSTG  
TLEAD  
VESD  
Storage Temperature  
Lead Temperature (Soldering, 10 seconds)  
Electrostatic Discharge Voltage  
- Human Body Model (AEC-Q100-002 Rev. E)  
- Charged Device Model (AEC-Q100-011 Rev. B)  
- Machine Model (AEC-Q100-003 Rev. E)  
Package Moisture Sensitivity Level  
1kV  
1.25kV  
200V  
MSL-1  
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating  
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this  
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.  
DC Operating Conditions (TA = -40°C to + 85°C, VDD = 2.0V to 3.6V unless otherwise specified)  
Symbol Parameter  
Min  
Typ  
Max  
Units  
Notes  
VDD  
IDD  
Power Supply Voltage  
2.0  
3.3  
3.6  
V
Power Supply Operating Current  
1
@
@
C = 1 MHz  
-
0.22  
mA  
mA  
C = 40 MHz  
1.5  
90  
5
2.5  
ISB  
Standby Current  
150  
µ
µ
µ
µ
A
A
A
A
2
3
4
4
IZZ  
Sleep Mode Current  
8
ILI  
Input Leakage Current  
-
-
1
1
ILO  
Output Leakage Current  
VIH  
VIL  
Input High Voltage  
0.7 VDD  
VDD + 0.3  
V
Input Low Voltage  
-0.3  
0.3 VDD  
V
V
V
V
V
VOH1  
VOH2  
VOL1  
VOL2  
RIN  
Output High Voltage (IOH = -1 mA, VDD=2.7V)  
Output High Voltage (IOH = -100 µA)  
Output Low Voltage (IOL = 2 mA, VDD=2.7V)  
Output Low Voltage (IOL = 150 µA)  
Input Resistance (/HOLD pin)  
For VIN = VIH (min)  
2.4  
-
-
VDD-0.2  
-
-
0.4  
0.2  
5
40  
1
KΩ  
MΩ  
For VIN = VIL (max)  
Notes  
1. C toggling between VDD-0.2V and VSS, other inputs VSS or VDD-0.2V.  
2. /S=VDD. All inputs VSS or VDD  
.
3. In Sleep mode and /S=VDD. All inputs VSS or VDD  
.
4.  
VSS VIN VDD and VSS VOUT VDD.  
5. The input pull-up circuit is stronger (> 40K) when the input voltage is above VIH and weak (> 1M) when the input  
voltage is below VIL.  
Data Retention (TA = -40°C to + 85°C)  
Parameter  
Min  
10  
Max  
-
Units  
Years  
Notes  
Data Retention  
Rev. 2.0  
May 2010  
Page 12 of 17  
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