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FM25CL64-S 参数 Datasheet PDF下载

FM25CL64-S图片预览
型号: FM25CL64-S
PDF下载: 下载PDF文件 查看货源
内容描述: 64Kb的串行FRAM存储器3V [64Kb FRAM Serial 3V Memory]
分类和应用: 存储
文件页数/大小: 13 页 / 134 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM25CL64  
Notes  
AC Parameters (TA = -40° C to + 85° C, CL = 30pF)  
VDD 2.7 to 3.0V  
VDD 3.0 to 3.65V  
Symbol  
fCK  
tCH  
Parameter  
Min  
0
25  
25  
10  
10  
Max  
18  
Min  
0
Max  
20  
Units  
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
SCK Clock Frequency  
Clock High Time  
Clock Low Time  
Chip Select Setup  
Chip Select Hold  
Output Disable Time  
Output Data Valid Time  
Output Hold Time  
Deselect Time  
22  
22  
10  
10  
1
1
tCL  
tCSU  
tCSH  
tOD  
tODV  
tOH  
tD  
20  
25  
20  
20  
2
0
60  
0
60  
ns  
tR  
tF  
tSU  
tH  
Data In Rise Time  
Data In Fall Time  
Data Setup Time  
Data Hold Time  
50  
50  
50  
50  
ns  
ns  
ns  
ns  
1,3  
1,3  
5
5
5
5
tHS  
tHH  
tHZ  
/Hold Setup Time  
/Hold Hold Time  
/Hold Low to Hi-Z  
/Hold High to Data Active  
10  
10  
10  
10  
ns  
ns  
ns  
ns  
20  
20  
20  
20  
2
2
tLZ  
Notes  
1. tCH + tCL = 1/fCK  
.
2. Characterized but not 100% tested in production.  
3. Rise and fall times measured between 10% and 90% of waveform.  
Capacitance (TA = 25° C, f=1.0 MHz, VDD = 3.3V)  
Symbol  
CO  
CI  
Parameter  
Output capacitance (SO)  
Input capacitance  
Min  
-
-
Max  
8
6
Units  
pF  
pF  
Notes  
1
1
Notes  
1. This parameter is periodically sampled and not 100% tested.  
Equivalent AC Load Circuit  
AC Test Conditions  
Input Pulse Levels  
Input rise and fall times  
Input and output timing levels  
10% and 90% of VDD  
5 ns  
30% and 70% of VDD  
3.3V  
1.2K  
Output  
0.95K Ω  
30 pF  
Data Retention (VDD = 2.7V to 3.65V unless otherwise specified)  
Parameter  
Data Retention  
Notes  
Min  
10  
Max  
-
Units  
Years  
Notes  
1
1. The relationship between retention, temperature, and the associated reliability level is characterized  
separately. Endurance is the guaranteed number of read or write cycles per address that can be  
performed while maintaining the specified data retention. It is unlikely to reach this limit for most  
applications.  
Rev. 2.1  
Apr. 2003  
Page 10 of 13  
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