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FM25040B-G 参数 Datasheet PDF下载

FM25040B-G图片预览
型号: FM25040B-G
PDF下载: 下载PDF文件 查看货源
内容描述: 4KB的串行5V F-RAM存储器 [4Kb Serial 5V F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管PC
文件页数/大小: 13 页 / 308 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM25040B - 4Kb 5V SPI F-RAM
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
V
DD
Power Supply Voltage with respect to V
SS
V
IN
Voltage on any pin with respect to V
SS
T
STG
T
LEAD
V
ESD
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
- Human Body Model
(AEC-Q100-002 Rev. E)
- Charged Device Model
(AEC-Q100-011 Rev. B)
- Machine Model
(AEC-Q100-003 Rev. E)
Package Moisture Sensitivity Level
Ratings
-1.0V to +7.0V
-1.0V to +7.0V
and V
IN
< V
DD
+1.0V
-55°C to + 125°C
260° C
3.5kV
1.25kV
250V
MSL-1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of
this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device
reliability.
DC Operating Conditions
(T
A
= -40° C to + 85° C, V
DD
= 4.5V to 5.5V unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
V
DD
Main Power Supply
4.5
5.0
5.5
V
I
DD
VDD Supply Current
mA
0.25
@ SCK = 1.0 MHz
mA
4.0
@ SCK = 20.0 MHz
I
SB
Standby Current
4
10
µA
I
LI
Input Leakage Current
±1
µA
I
LO
Output Leakage Current
±1
µA
V
IH
Input High Voltage
0.7 V
DD
V
DD
+ 0.3
V
V
IL
Input Low Voltage
-0.3
0.3 V
DD
V
V
OH
Output High Voltage
-
V
V
DD
– 0.8
@ I
OH
= -1 mA
V
OL
Output Low Voltage
-
0.4
V
@ I
OL
= 2 mA
V
HYS
Input Hysteresis
0.05 V
DD
-
V
Notes
1.
2.
3.
4.
SCK toggling between V
DD
-0.3V and V
SS
, other inputs V
SS
or V
DD
-0.3V.
SCK = SI = /CS=V
DD
. All inputs V
SS
or V
DD
.
V
IN
or V
OUT
= V
SS
to V
DD
.
This parameter is periodically sampled and not 100% tested.
Notes
1
2
3
3
4
Rev. 1.2
Feb. 2011
Page 9 of
13