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FM24VN02-GTR 参数 Datasheet PDF下载

FM24VN02-GTR图片预览
型号: FM24VN02-GTR
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kb的3V串行F-RAM存储器 [256Kb Serial 3V F-RAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 200 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM24VN02-GTR的Datasheet PDF文件第7页浏览型号FM24VN02-GTR的Datasheet PDF文件第8页浏览型号FM24VN02-GTR的Datasheet PDF文件第9页浏览型号FM24VN02-GTR的Datasheet PDF文件第10页浏览型号FM24VN02-GTR的Datasheet PDF文件第11页浏览型号FM24VN02-GTR的Datasheet PDF文件第13页浏览型号FM24VN02-GTR的Datasheet PDF文件第14页浏览型号FM24VN02-GTR的Datasheet PDF文件第15页  
FM24V02 - 256Kb I2C FRAM  
AC Parameters (TA = -40° C to + 85° C, VDD =2.0V to 3.6V unless otherwise specified)  
F/S-mode  
HS-mode  
(CL<500pF)  
(CL<100pF)  
Symbol Parameter  
Min  
Max  
Min  
Max  
Units Notes  
fSCL  
tLOW  
tHIGH  
tAA  
SCL Clock Frequency  
0
500  
260  
1.0  
0
160  
60  
3.4  
MHz  
ns  
1
Clock Low Period  
Clock High Period  
SCL Low to SDA Data Out Valid  
ns  
450  
130  
ns  
tBUF  
Bus Free Before New Transmission  
Start Condition Hold Time  
Start Condition Setup for Repeated Start  
Data In Hold  
0.5  
260  
260  
0
0.3  
160  
160  
0
µs  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tHD:STA  
tSU:STA  
tHD:DAT  
tSU:DAT  
tR  
Data In Setup  
50  
10  
3
2
2
Input Rise Time  
120  
120  
80  
80  
tF  
Input Fall Time  
tSU:STO  
Stop Condition Setup  
260  
0
160  
0
tDH  
Data Output Hold (from SCL @ VIL)  
Noise Suppression Time Constant on SCL, SDA  
tSP  
50  
5
Notes: All SCL specifications as well as start and stop conditions apply to both read and write operations.  
1. The speed-related specifications are guaranteed characteristic points along a continuous curve of operation from DC to fSCL  
(max).  
2. This parameter is periodically sampled and not 100% tested.  
3. In HS-mode and VDD < 2.7V, the tSU:DAT (min.) spec is 15ns.  
Capacitance (TA = 25° C, f=1.0 MHz, VDD = 3.3V)  
Symbol Parameter  
Min  
Max  
Units Notes  
CI/O  
CIN  
Input/Output Capacitance (SDA)  
Input Capacitance  
-
-
8
6
pF  
pF  
1
1
Notes  
1. This parameter is periodically sampled and not 100% tested.  
Power Cycle Timing (TA = -40° C to +85° C, VDD = 2.0V to 3.6V)  
Symbol Parameter  
Min  
Max  
Units Notes  
tVR  
tVF  
VDD Rise Time  
50  
100  
250  
0
-
µ
s/V  
1,2  
1,2  
VDD Fall Time  
-
-
µs/V  
µ
µ
µ
tPU  
Power Up (VDD min) to First Access (Start condition)  
Last Access (Stop condition) to Power Down (VDD min)  
Recovery Time from Sleep Mode  
s
s
s
tPD  
tREC  
Notes  
-
-
400  
1. This parameter is characterized and not 100% tested.  
2. Slope measured at any point on VDD waveform.  
Rev. 0.1  
Mar. 2009  
Page 12 of 15