Preliminary
FM21LD16
2Mbit F-RAM Memory
Features
2Mbit Ferroelectric Nonvolatile RAM
•
Organized as 128Kx16
•
Configurable as 256Kx8 Using /UB, /LB
•
10
14
Read/Write Cycles
•
NoDelay™ Writes
•
Page Mode Operation to 40MHz
•
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
•
JEDEC 128Kx16 SRAM Pinout
•
60 ns Access Time, 110 ns Cycle Time
Advanced Features
•
Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
•
No Battery Concerns
•
Monolithic Reliability
•
True Surface Mount Solution, No Rework Steps
•
Superior for Moisture, Shock, and Vibration
Low Power Operation
•
2.7V – 3.6V Power Supply
•
Low Standby Current (90µA typ.)
•
Low Active Current (8 mA typ.)
Industry Standard Configuration
•
Industrial Temperature -40° C to +85° C
•
48-ball “Green”/RoHS FBGA package
•
Pin compatible with FM22LD16 (4Mb) and
FM23MLD16 (8Mb)
The device is available in a 48-ball FBGA package.
Device specifications are guaranteed over industrial
temperature range –40°C to +85°C.
Pin Configuration
1
2
3
4
5
6
Description
The FM21LD16 is a 128Kx16 nonvolatile memory
that reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional disadvantages, and system design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and high write endurance make the
F-RAM superior to other types of memory.
In-system operation of the FM21LD16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The F-RAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM21LD16 ideal
for nonvolatile memory applications requiring
frequent or rapid writes in the form of an SRAM.
The FM21LD16 includes a low voltage monitor that
blocks access to the memory array when V
DD
drops
below V
DD
min. The memory is protected against an
inadvertent access and data corruption under this
condition. The device also features software-
controlled write protection. The memory array is
divided into 8 uniform blocks, each of which can be
individually write protected.
A
B
C
D
E
F
G
H
/LB
/OE
A0
A1
A2
NC
DQ8
/UB
A3
A4
/CE
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
VSS
DQ11
NC
A7
DQ3
VDD
VDD
DQ12
NC
A16
DQ4
VSS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
NC
A12
A13
/WE
DQ7
NC
A8
A9
A10
A11
NC
Top View (Ball Down)
Ordering Information
FM21LD16-60-BG
60 ns access, 48-ball
“Green”/RoHS FBGA
FM21LD16-60-BGTR 60 ns access, 48-ball
“Green”/RoHS FBGA,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.0
Dec. 2009
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Page 1 of 14
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
