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FM18W08-SG 参数 Datasheet PDF下载

FM18W08-SG图片预览
型号: FM18W08-SG
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB宽电压字节宽度的F- RAM [256Kb Wide Voltage Bytewide F-RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 333 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM18W08  
Address  
Latch &  
Decoder  
A(14:0)  
A(14:0)  
32,768 x 8 FRAM Array  
CE  
Control  
Logic  
WE  
OE  
I/O Latch  
Bus Driver  
DQ(7:0)  
Figure 1. Block Diagram  
Pin Description  
Pin Name  
Type  
Description  
A(14:0)  
Input  
Address: The 15 address lines select one of 32,768 bytes in the F-RAM array. The  
address value is latched on the falling edge of /CE.  
DQ(7:0)  
/CE  
I/O  
Input  
Data: 8-bit bi-directional data bus for accessing the F-RAM array.  
Chip Enable: /CE selects the device when low. Asserting /CE low causes the  
address to be latched internally. Address changes that occur after /CE goes low  
will be ignored until the next falling edge occurs.  
/OE  
Input  
Input  
Output Enable: Asserting /OE low causes the FM18W08 to drive the data bus  
when valid data is available. Deasserting /OE high causes the DQ pins to be tri-  
stated.  
Write Enable: Asserting /WE low causes the FM18W08 to write the contents of  
the data bus to the address location latched by the falling edge of /CE.  
Supply Voltage  
/WE  
VDD  
VSS  
Supply  
Supply  
Ground  
Functional Truth Table  
/CE  
H
L
L
/WE  
Function  
Standby/Precharge  
Latch Address (and Begin Write if /WE=low)  
Read  
X
X
H
Write  
Note: The /OE pin controls only the DQ output buffers.  
Rev. 2.0  
Dec. 2011  
Page 2 of 11  
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