FM18L08
Read Cycle AC Parameters
(T
A
= -40° C to + 85° C, V
DD
= 3.0V to 3.65V)
Symbol
Parameter
Min
t
CE
Chip Enable Access Time ( to data valid)
t
CA
Chip Enable Active Time
70
t
RC
Read Cycle Time
140
t
PC
Precharge Time
70
t
AS
Address Setup Time
0
t
AH
Address Hold Time
15
t
OE
Output Enable Access Time
t
HZ
Chip Enable to Output High-Z
t
OHZ
Output Enable to Output High-Z
Write Cycle AC Parameters
(T
A
= -40° C to + 85° C, V
DD
= 3.0V to 3.65V)
Symbol
Parameter
Min
t
CA
Chip Enable Active Time
70
t
CW
Chip Enable to Write High
70
t
WC
Write Cycle Time
140
t
PC
Precharge Time
70
t
AS
Address Setup Time
0
t
AH
Address Hold Time
15
t
WP
Write Enable Pulse Width
40
t
DS
Data Setup
40
t
DH
Data Hold
0
t
WZ
Write Enable Low to Output High Z
t
WX
Write Enable High to Output Driven
10
t
HZ
Chip Enable to Output High-Z
t
WS
Write Setup
0
t
WH
Write Hold
0
Notes
1
2
Max
70
2,000
10
15
15
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
Max
2,000
15
15
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1
2
2
This parameter is periodically sampled and not 100% tested.
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Data Retention
(V
DD
= 3.0V to 3.65V)
Parameter
Data Retention
Min
45
Units
Years
Notes
1
Power Cycle Timing
(T
A
= -40° C to + 85° C, V
DD
= 3.0V to 3.65V)
Symbol
Parameter
Min
t
PU
V
DD
(min.) to First Access Start
1
t
PD
Last Access Complete to V
DD
(min.)
0
Capacitance
(T
A
= 25° C , f=1 MHz, V
DD
= 3.3V)
Symbol
Parameter
C
I/O
Input/Output Capacitance (DQ)
C
IN
Input Capacitance
Units
µS
µS
Notes
Max
8
6
Units
pF
pF
Notes
Rev. 3.4
July 2007
7 of 13
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
