欢迎访问ic37.com |
会员登录 免费注册
发布采购

FM18L08_07 参数 Datasheet PDF下载

FM18L08_07图片预览
型号: FM18L08_07
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB的字节宽度FRAM存储器 [256Kb Bytewide FRAM Memory]
分类和应用: 存储
文件页数/大小: 13 页 / 126 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM18L08_07的Datasheet PDF文件第1页浏览型号FM18L08_07的Datasheet PDF文件第2页浏览型号FM18L08_07的Datasheet PDF文件第3页浏览型号FM18L08_07的Datasheet PDF文件第4页浏览型号FM18L08_07的Datasheet PDF文件第6页浏览型号FM18L08_07的Datasheet PDF文件第7页浏览型号FM18L08_07的Datasheet PDF文件第8页浏览型号FM18L08_07的Datasheet PDF文件第9页  
FM18L08
A second design consideration relates to the level of
V
DD
during operation. Battery-backed SRAMs are
forced to monitor V
DD
in order to switch to battery
backup. They typically block user access below a
certain V
DD
level in order to prevent loading the
battery with current demand from an active SRAM.
The user can be abruptly cut off from access to the
memory in a power down situation without warning.
FRAM memories do not need this system overhead.
The memory will not block access at any V
DD
level.
The user, however, should prevent the processor from
accessing memory when V
DD
is out-of-tolerance. The
common design practice of holding a processor in
reset during powerdown may be sufficient. It is
recommended that Chip Enable is pulled high and
allowed to track V
DD
during powerup and powerdown
cycles. It is the user’s responsibility to ensure that
chip enable is high to prevent accesses below V
DD
min. (3.0V). Figure 3 shows an external pullup
resistor on /CE which will keep the pin high during
power cycles assuming the MCU/MPU pin tri-states
during the reset condition. The pullup resistor value
should be chosen to ensure the /CE pin tracks V
DD
yet
a high enough value that the current drawn when /CE
is low is not an issue.
V
DD
R
FM18L08
CE
MCU/
MPU
WE
OE
A(14:0)
DQ
Figure 3. Use of Pullup Resistor on /CE
Rev. 3.4
July 2007
5 of 13