Ramtron
Read Cycle AC Parameters
TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
Min
Max
Units
Notes
tCE
Chip Enable Access Time ( to data valid)
120
ns
tCA
Chip Enable Active Time
120
10,000
ns
tRC
Read Cycle Time
180
ns
tPC
Precharge Time
60
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
10
ns
tOE
Output Enable Access Time
10
ns
tHZ
Chip Enable to Output High-Z
15
ns
1
tOHZ
Output Enable to Output High-Z
15
ns
1
FM1608
Write Cycle AC Parameters
TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
Min
Max
Units
Notes
tCA
Chip Enable Active Time
120
10,000
ns
tCW
Chip Enable to Write High
120
ns
tWC
Write Cycle Time
180
ns
tPC
Precharge Time
60
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
10
ns
tWP
Write Enable Pulse Width
40
ns
tDS
Data Setup
40
ns
tDH
Data Hold
0
ns
tWZ
Write Enable Low to Output High Z
15
ns
1
tWX
Write Enable High to Output Driven
10
ns
1
tHZ
Chip Enable to Output High-Z
15
ns
1
tWS
Write Setup
0
ns
2
tWH
Write Hold
0
ns
2
Notes
1 This parameter is periodically sampled and not 100% tested.
2 The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Power Cycle Timing
TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
Min
Units Notes
tPU
VDD Min to First Access Start
1
µs
tPD
Last Access Complete to VDD Min
0
µs
Capacitance
TA = 25° C , f=1.0 MHz, VDD = 5V
Symbol
Parameter
Max
CI/O
Input Output Capacitance
8
CIN
Input Capacitance
6
Units
pF
pF
Notes
28 July 2000
8/12
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
