欢迎访问ic37.com |
会员登录 免费注册
发布采购

FM1608-120-S 参数 Datasheet PDF下载

FM1608-120-S图片预览
型号: FM1608-120-S
PDF下载: 下载PDF文件 查看货源
内容描述: 64KB字节宽度FRAM存储器 [64Kb Bytewide FRAM Memory]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 106 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM1608-120-S的Datasheet PDF文件第3页浏览型号FM1608-120-S的Datasheet PDF文件第4页浏览型号FM1608-120-S的Datasheet PDF文件第5页浏览型号FM1608-120-S的Datasheet PDF文件第6页浏览型号FM1608-120-S的Datasheet PDF文件第8页浏览型号FM1608-120-S的Datasheet PDF文件第9页浏览型号FM1608-120-S的Datasheet PDF文件第10页浏览型号FM1608-120-S的Datasheet PDF文件第11页  
Ramtron
FM1608
Electrical Specifications
Absolute Maximum Ratings
Description
Ambient storage or operating temperature
Voltage on any pin with respect to ground
Lead temperature (Soldering, 10 seconds)
Ratings
-40°C to + 85°C
-1.0V to +7.0V
300° C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these or any other conditions above those listed in
the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for
extended periods may affect device reliability
DC Operating Conditions
TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
Min
Typ
Max
Units
Notes
VDD
Power Supply
4.5
5.0
5.5
V
1
IDD
VDD Supply Current - Active
5
15
mA
2
ISB
Standby Current - TTL
400
µA
3
ISB
Standby Current - CMOS
7
20
µA
4
ILI
Input Leakage Current
10
µA
5
ILO
Output Leakage Current
10
µA
5
VIL
Input Low Voltage
-1.0
0.8
V
1
VIH
Input High Voltage
2.0
VDD + 1.0
V
1
VOL
Output Low Voltage
0.4
V
1,6
VOH
Output High Voltage
2.4V
V
1,7
Notes
1. Referenced to VSS.
2. VDD = 5.5V, /CE cycling at minimum cycle time. All inputs at CMOS levels, all outputs unloaded.
3. VDD = 5.5V, /CE at VIH, All inputs at TTL levels, all outputs unloaded.
4. VDD = 5.5V, /CE at VIH, All inputs at CMOS levels, all outputs unloaded.
5. VIN, VOUT between VDD and VSS.
6. IOL = 4.2 mA
7. IOH = -2.0 mA
28 July 2000
7/12