欢迎访问ic37.com |
会员登录 免费注册
发布采购

FM1106-GATR 参数 Datasheet PDF下载

FM1106-GATR图片预览
型号: FM1106-GATR
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性3V双国节电器 [Nonvolatile 3V Dual State Saver]
分类和应用: 触发器逻辑集成电路光电二极管
文件页数/大小: 8 页 / 121 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM1106-GATR的Datasheet PDF文件第1页浏览型号FM1106-GATR的Datasheet PDF文件第2页浏览型号FM1106-GATR的Datasheet PDF文件第3页浏览型号FM1106-GATR的Datasheet PDF文件第5页浏览型号FM1106-GATR的Datasheet PDF文件第6页浏览型号FM1106-GATR的Datasheet PDF文件第7页浏览型号FM1106-GATR的Datasheet PDF文件第8页  
FM1106 - Automotive Temp.
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
V
DD
Power Supply Voltage with respect to V
SS
V
IN
Voltage on any signal pin with respect to V
SS
T
STG
T
LEAD
V
ESD
Storage temperature
Lead temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
- Human Body Model
(JEDEC Std JESD22-A114-B)
- Charged Device Model
(JEDEC Std JESD22-C101-A)
- Machine Model
(JEDEC Std JESD22-A115-A)
Package Moisture Sensitivity Level
Ratings
-1.0V to +5.0V
-1.0V to +5.0V
and V
IN
< V
DD
+1.0V
-55°C to + 125°C
300° C
4kV
1kV
200V
MSL-1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this
specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions
(
T
A
= -40° C to +125° C, V
DD
= 2.7V to 3.6V unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units
Notes
V
DD
Power Supply Voltage
2.7
-
3.6
V
1
I
SB
Standby Current
µ
A
-
5
@
+85°C
µ
A
-
8
@
+125°C
C
PD
Power Dissipation Capacitance
-
165
pF
2
I
LI
Input Leakage Current
3
±1
µA
I
LO
Output Leakage Current
3
±1
µA
V
IL
Input Low Voltage
-0.3
0.3 V
DD
V
V
IH
Input High Voltage
0.7 V
DD
V
DD
+ 0.3
V
V
OH
Output High Voltage
@
I
OH
= -1 mA
V
DD
– 0.5
-
V
V
OL
Output Low Voltage
V
0.4
-
@
I
OL
= 1 mA (V
DD
=2.7V)
V
0.8
-
@
I
OL
= 10 mA (V
DD
=2.7V)
V
HYS
Input Hysteresis (CLK, EN)
200
mV
4
Notes
1.
CLK = V
SS
, all other inputs at V
DD
or V
SS
.
2.
To calculate device power dissipation, P
D
= C
PD
*V
DD2
*f
i
+ C
L
*V
DD2
*f
o
, where f
i
is the input clk freq, f
o
is the output freq,
3.
4.
and C
L
is the output load capacitance. Active current I
DD
may be calculated as I
DD
= C
PD
*V
DD
*f
i
, assuming outputs are
floating.
V
IN
or V
OUT
= V
SS
to V
DD
.
This parameter is characterized but not tested.
Capacitance
(T
A
= 25° C , f=1.0 MHz, V
DD
= 3.3V)
Symbol Parameter
C
I
Input Capacitance
Notes
1.
This parameter is characterized but not tested.
Min
-
Max
8
Units
pF
Notes
1
Rev. 3.0
Apr. 2009
Page 4 of 8