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FM1106-GATR 参数 Datasheet PDF下载

FM1106-GATR图片预览
型号: FM1106-GATR
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性3V双国节电器 [Nonvolatile 3V Dual State Saver]
分类和应用: 触发器逻辑集成电路光电二极管
文件页数/大小: 8 页 / 121 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM1106 - Automotive Temp.
Description
Nonvolatile storage applied to logic is a
revolutionary concept. The FM1106 simplifies the
design of system control functions. This product is
unique because it remembers the stored output
values in the absence of power. Any change in the
latched state is automatically written to a nonvolatile
ferroelectric latch. This function is possible due to
the fast write time and extremely high write
endurance of the underlying ferroelectric memory
technology.
Use of Enable Pin
The FM1106 has an enable pin that is intended to be
used in conjunction with a system reset. An active-
low reset may be tied directly to the EN pin. At
power-up, /RESET will be held low for some time
during which the data input and CLK pins will be
ignored. Once the system comes out of reset and EN
goes high, the outputs Q
N
drive to the state that were
previously latched and the device operates normally.
When the EN pin is low, the outputs Q
N
are tri-
stated.
The enable pin may be tied to V
DD
since the device
integrates a power management circuit that monitors
the V
DD
level during power cycles.
Rev. 3.0
Apr. 2009
Page 3 of 8