Mechanical Data
72 Pin SIMM Module
4.245 (107.82)
4.255 (108.08)
Inches (mm)
3.984 (101.19)
0.133 (3.38)
0.123 (3.12)
0.127 (3.22)
0.400
(10.16)
0.225
(5.72)
C1
C2
C3
C4
C5
C6
C7
C8
C9
0.945 (24.00)
0.955 (24.26)
0.010
(.254)
U1
U2
U3
U4
U5
U6
U7
U8
U9
1
72
0.050 (1.27)
0.040 (1.02)
0.042 (1.07)
0.047 (1.19)
0.054 (1.37)
0.100
(2.54)
0.245 (6.22)
0.255 (6.48)
0.060 (1.52)
0.064 (1.63)
0.075 (1.90)
0.085 (2.16)
0.208 (5.28)
RAD.
0.062 (1.57) RAD.
0.250 (6.35)
1.750 (44.45)
0.250 (6.35)
3.750 (95.25)
2.125 (53.98)
U1-U4, U6-U9 — Enhanced DM2242J-XX, 1M x 4 EDRAMs, 300 Mil SOJ
U5 — Enhanced DM2252J-XX, 1M x 4 EDRAM with Write-Per-Bit (Not present on DM 1M32SJ)
C1-C9 — 0.22µF Chip Capacitors
Socket — Amp 822030-3 or Equivalent
Part Numbering System
DM1M36SJ6 - 12I
Temperature Range
o
No Designator = 0 to 70 C (Commercial)
o
I = -40 to 85 C (Industrial)
o
L = 0 to 70 C, Low Power Self-Refresh
Access Time from Cache in Nanoseconds
12ns
15ns
Configuration
6 = 5 Volt, Multibank EDO
7 = 3.3 Volt, Multibank EDO
Packaging System
J = 300 Mil, Plastic SOJ
Memory Module Configuration
S = SIMM
I/O Width (Including Parity)
32 = 32 Bits
36 = 36 Bits
Memory Depth (Megabits)
Dynamic Memory
The information contained herein is subject to change without notice. Enhanced Memory Systems Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in
an Enhanced product, nor does it convey or imply any license under patent or other rights.
2-93
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
