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HYS64T256020EU-3S-B 参数 Datasheet PDF下载

HYS64T256020EU-3S-B图片预览
型号: HYS64T256020EU-3S-B
PDF下载: 下载PDF文件 查看货源
内容描述: 240针无缓冲DDR2 SDRAM模组 [240-Pin unbuffered DDR2 SDRAM Modules]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 60 页 / 3289 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYS[64/72]T256020EU-[25F/2.5/3/3S/3.7]-B  
Unbuffered DDR2 SDRAM Module  
TABLE 19  
ODT AC Character. and Operating Conditions for DDR2-533 & DDR2-400  
Symbol  
Parameter / Condition  
Values  
Unit  
Note  
Min.  
Max.  
tAOND  
tAON  
ODT turn-on delay  
2
2
tCK  
ns  
ns  
tCK  
ns  
ns  
tCK  
tCK  
1)  
2)  
ODT turn-on  
tAC.MIN  
tAC.MAX + 1 ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on (Power-Down Modes)  
ODT turn-off delay  
t
AC.MIN + 2 ns  
2 tCK + tAC.MAX + 1 ns  
2.5  
2.5  
ODT turn-off  
tAC.MIN  
tAC.MAX + 0.6 ns  
tAOFPD  
tANPD  
tAXPD  
ODT turn-off (Power-Down Modes)  
ODT to Power Down Mode Entry Latency  
ODT Power Down Exit Latency  
t
AC.MIN + 2 ns  
2.5 tCK + tAC.MAX + 1 ns  
3
8
1) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the  
ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns  
(= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.  
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.  
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is  
12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.  
Rev. 1.0, 2006-10  
29  
10262006-SX8C-DEY8  
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