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HYI39SC128800FE 参数 Datasheet PDF下载

HYI39SC128800FE图片预览
型号: HYI39SC128800FE
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位同步DRAM [128-MBit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 20 页 / 1127 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]39SC128[800/160]FE  
128-MBit Synchronous DRAM  
Parameter  
Symbol  
–7  
–6  
Unit Note1)2)  
3)  
PC133–222  
PC166–333  
Min.  
Max.  
Min.  
Max.  
6)  
CKE Hold Time  
tCKH  
tRSC  
tSB  
0.8  
2
7
0.8  
2
6
ns  
Mode Register Set-up to Active delay  
Power Down Mode Entry Time  
Common Parameters  
tCK  
0
0
ns  
7)  
7)  
7)  
7)  
Row to Column Delay Time  
Row Precharge Time  
tRCD  
tRP  
tRAS  
tRC  
15  
15  
37  
60  
63  
14  
1
15  
15  
36  
60  
60  
12  
1
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
Row Active Time  
100k  
100k  
Row Cycle Time  
Row Cycle Time during Auto Refresh  
Activate(a) to Activate(b) Command period  
CAS(a) to CAS(b) Command period  
Refresh Cycle  
tRFC  
tRRD  
tCCD  
7)  
Refresh Period (4096 cycles)  
Self Refresh Exit Time  
tREF  
tSREX  
tOH  
1
3
64  
64  
ms  
tCK  
ns  
1
3)5)  
Data Out Hold Time  
2.5  
Read Cycle  
Data Out to Low Impedance Time  
Data Out to High Impedance Time  
DQM Data Out Disable Latency  
Write Cycle  
tLZ  
0
7
0
6
ns  
ns  
tCK  
tHZ  
3
3
tDQZ  
2
2
8)  
9)  
Last Data Input to Precharge  
(Write without Auto Precharge)  
tWR  
14  
0
12  
0
ns  
Last Data Input to Activate  
(Write with Auto Precharge)  
tDAL(min.)  
tDQW  
tCK  
tCK  
DQM Write Mask Latency  
1) TA = 0 to 70 °C; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V, tT = 1 ns  
2) For proper power-up see the operation section of this data sheet.  
3) AC timing tests for LV-TTL versions have VIL = 0.4 V and VIH = 2.4 V with the timing referenced to the 1.4 V crossover point. The transition  
time is measured between VIH and VIL. All AC measurements assume tT = 1 ns with the AC output load circuit shown in figure below.  
Specified tAC and tOH parameters are measured with a 50 pF only, without any resistive termination and with an input signal of 1V / ns edge  
rate between 0.8 V and 2.0 V.  
4) If clock rising time is longer than 1 ns, a time (tT/2 - 0.5) ns has to be added to this parameter.  
5) Access time from clock tac is 4.6 ns for PC133 components with no termination and 0 pF load,  
Data out hold time toh is 1.8 ns for PC133 components with no termination and 0 pF load.  
6) If tT is longer than 1 ns, a time (tT - 1) ns has to be added to this parameter.  
7) These parameter account for the number of clock cycles and depend on the operating frequency of the clock, as follows:  
the number of clock cycles = specified value of timing period (counted in fractions as a whole number)  
8) It is recommended to use two clock cycles between the last data-in and the precharge command in case of a write command without Auto-  
Precharge. One clock cycle between the last data-in and the precharge command is also supported, but restricted to cycle times tCK greater  
or equal the specified tWR value, where tck is equal to the actual system clock time.  
9) When a Write command with Auto Precharge has been issued, a time of tDAL(min) has be fullfilled before the next Activate Command can  
be applied. For each of the terms, if not already an integer, round up to the next highest integer. tCK is equal to the actual system clock time.  
Rev. 1.1, 2007-02  
14  
09072006-N4GC-EREN  
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