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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
1
Overview  
1.1  
Features  
Low power DDR 1Gbit x16 dual die implementation  
Each die organized as 4 banks x 8 MBit x 16  
2 KByte page size  
Two Chip Selects (2 CS) for reducing power consumption  
Options for one CKE and two CKEs are available. Option with second CKE provides futher power saving  
Double-data-rate architecture: two data transfers per clock cycle  
Bidirectional data strobe (DQS) is transmitted / received with data; to be used in capturing data at the receiver  
DQS is edge-aligned with data for READs and center-aligned with data for WRITEs  
Differential clock input (CK / CK)  
Commands entered on positive CK edge; data and mask data are referenced to both edges of DQS  
Four internal banks for concurrent operation  
Programmable CAS latency: 2 and 3  
Programmable burst length: 2, 4, 8 and 16  
Programmable drive strength (full, half, quarter)  
Auto refresh and self refresh modes  
8192 refresh cycles / 64ms  
Auto precharge  
Commercial (-0°C to +70°C) and Extended (-25°C to +85°C) operating temperature ranges  
60-ball PG-VFBGA-60-6 package (11 × 10.5 × 1.0 mm)  
RoHS Compliant Product1)  
Power Saving Features  
Low supply voltages: VDD = 1.70 V 1.90 V, VDDQ = 1.70 V 1.90 V  
Optimized operating (IDD0, IDD4), self refresh (IDD6) and standby currents (IDD2, IDD3  
DDR I/O scheme with no DLL  
Programmable Partial Array Self Refresh (PASR)  
Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor  
Clock Stop, Power-Down and Deep Power-Down modes  
)
TABLE 1  
Performance  
Part Number Speed Code  
Clock Frequency (fCKmax  
- 6  
- 7.5  
133  
Unit  
)
CL = 3  
CL = 2  
166  
83  
MHz  
MHz  
ns  
66  
Access Time (tACmax  
)
5.5  
6.5  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Rev.1.0, 2007-03  
3
10242006-Y557-TZXW