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HYE18M1G16 参数 Datasheet PDF下载

HYE18M1G16图片预览
型号: HYE18M1G16
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位x16的移动DDR -RAM [1-Gbit x16 DDR Mobile-RAM]
分类和应用: 双倍数据速率
文件页数/大小: 65 页 / 3507 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18M1G16[0/1]BF  
1-Gbit DDR Mobile-RAM  
1. At first, device core power (VDD) and device IO power (VDDQ) must be brought up simultaneously. Typically VDD and VDDQ  
are driven from a single power converter output.  
Assert and hold CKE to a HIGH level.  
2. After VDD and VDDQ are stable and CKE is HIGH, apply stable clocks.  
3. Wait for 200µs while issuing NOP or DESELECT commands.  
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least tRP period.  
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least tRFC period.  
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode Register, each  
followed by NOP or DESELECT commands for at least tMRD period; the order in which both registers are programmed is  
not important.  
Following these steps, the DDR Mobile-RAM is ready for normal operation.  
Rev.1.0, 2007-03  
10  
10242006-Y557-TZXW  
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