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HYE18L256160BF-7.5 参数 Datasheet PDF下载

HYE18L256160BF-7.5图片预览
型号: HYE18L256160BF-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, GREEN, PLASTIC, VFBGA-54]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 58 页 / 2718 K
品牌: QIMONDA [ QIMONDA AG ]
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Data Sheet  
HY[B/E]18L256160B[C/F]L-7.5  
256-Mbit Mobile-RAM  
2.1  
Power On and Initialization  
The Mobile-RAM must be powered up and initialized in a predefined manner (see Figure 3). Operational procedures other than  
those specified may result in undefined operation.  
FIGURE 3  
Power-Up Sequence and Mode Register Sets  
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1. At first, device core power (VDD) and device IO power (VDDQ) must be brought up simultaneously. Typically VDD and VDDQ  
are driven from a single power converter output.  
Assert and hold CKE and DQM to a HIGH level.  
2. After VDD and VDDQ are stable and CKE is HIGH, apply stable clocks.  
3. Wait for 200µs while issuing NOP or DESELECT commands.  
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least tRP period.  
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least tRFC period.  
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode Register, each  
followed by NOP or DESELECT commands for at least tMRD period; the order in which both registers are programmed is  
not important. Programming of the Extended Mode Register may be omitted when default values (half drive strength, 4 bank  
refresh) will be used.  
Following these steps, the Mobile-RAM is ready for normal operation.  
Rev. 1.73, 2006-09  
8
01302004-CZ2R-J9SE