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HYE18L256160BFX-7.5 参数 Datasheet PDF下载

HYE18L256160BFX-7.5图片预览
型号: HYE18L256160BFX-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用256兆移动-RAM [DRAMs for Mobile Applications 256-Mbit Mobile-RAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 1590 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L256160B[C/F]X-7.5  
256-Mbit Mobile-RAM  
Functional Description  
2.4.9  
AUTO REFRESH and SELF REFRESH  
The Mobile-RAM requires a refresh of all rows in a rolling interval. Each refresh is generated in one of two ways:  
by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode.  
2.4.9.1  
AUTO REFRESH  
Auto Refresh is used during normal operation of the  
Mobile-RAM. The command is non persistent, so it  
must be issued each time a refresh is required. A  
minimum row cycle time (tRC) is required between two  
AUTO REFRESH commands. The same rule applies to  
any access command after the auto refresh operation.  
All banks must be precharged prior to the AUTO  
REFRESH command.  
#,+  
#+%  
#3  
ꢌ(IGHꢍ  
2!3  
#!3  
7%  
The refresh addressing is generated by the internal  
refresh controller. This makes the address bits “Don’t  
Care” during an AUTO REFRESH command. The  
Mobile-RAM requires AUTO REFRESH cycles at an  
average periodic interval of 7.8 µs (max.). Partial array  
mode has no influence on auto refresh mode.  
!ꢂꢎ!ꢀꢁ  
"!ꢂꢏ"!ꢀ  
ꢒ $ONgT #ARE  
Figure 41 AUTO REFRESH Command  
#,+  
T20  
T2#  
T2#  
02%  
./0  
!2&  
./0  
./0  
!2&  
./0  
./0  
!#4  
#OMMAN  
"A !ꢏ  
!
RESS  
2OW N  
2OW N  
0RE !LL  
!ꢀꢂ ꢌ!0ꢍ  
$1  
(IGH:  
ꢒ $ONgT #ARE  
"A !ꢏ 2OW N BANK !ꢏ ROW N  
Figure 42 Auto Refresh  
Data Sheet  
34  
Rev. 1.11, 2007-01  
07142005-CR47-RB2E  
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