HY[B/E]18L256160B[C/F]X-7.5
256-Mbit Mobile-RAM
Functional Description
Table 11
Timing Parameters for WRITE
Parameter
Symbol
- 7.5
Units
Notes
min.
1.5
0.8
0.5
0
max.
—
DQ and DQM input setup time
DQ input hold time
tIS
tIH
ns
ns
ns
tCK
ns
ns
ns
ns
ns
—
—
—
—
DQM input hold time
—
DQM write mask latency
tDQW
tRC
—
—
1)
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE to PRECHARGE command period
WRITE recovery time
67
—
1)
1)
1)
1)
tRCD
tRAS
tWR
tRP
19
—
45
100k
—
14
PRECHARGE command period
19
—
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
#,+
T2#$
T72
T20
T2!3
T2#
!#4
./0
72)4%
./0
./0
./0
./0
02%
./0
!#4
#OMMAN
"A !ꢏ
"A !ꢏ
#OL N
"A !ꢏ
!
RESS
2OW X
2OW B
0RE !LL
!0
$IS
!ꢀꢂ ꢌ!0ꢍ
$1
2OW X
2OW B
!0
0RE "ANK !
$) N
$) Nꢔꢀ
$) Nꢔꢁ
$) Nꢔꢆ
"A !ꢏ #OL N ꢒ BANK !ꢏ COLUMN N
$) N ꢒ $ATA )N TO COLUMN N
ꢒ $ONgT #ARE
"URST ,ENGTH ꢒ ꢈ IN THE CASE SHOWNꢐ
ꢆ SUBSEQUENT ELEMENTS OF $ATA )N ARE PROVI E IN THE PROGRAMME OR ER FOLLOWING $) Nꢐ
Figure 25 WRITE Burst (CAS Latency = 2)
Data Sheet
25
Rev. 1.11, 2007-01
07142005-CR47-RB2E
QIMONDA [ QIMONDA AG ]
