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HYE18L256160BFX-7.5 参数 Datasheet PDF下载

HYE18L256160BFX-7.5图片预览
型号: HYE18L256160BFX-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用256兆移动-RAM [DRAMs for Mobile Applications 256-Mbit Mobile-RAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 1590 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L256160B[C/F]X-7.5  
256-Mbit Mobile-RAM  
Functional Description  
2.4.5  
READ  
Subsequent to programming the mode register with  
CAS latency and burst length, READ bursts are  
initiated with a READ command, as shown in  
Figure 11. Basic timings for the DQs are shown in  
Figure 12; they apply to all read operations and  
therefore are omitted from all subsequent timing  
diagrams.  
#,+  
#+%  
#3  
ꢌ(IGHꢍ  
The starting column and bank addresses are provided  
with the READ command and Auto Precharge is either  
enabled or disabled for that burst access. If Auto  
Precharge is enabled, the row being accessed starts  
precharge at the completion of the burst, provided tRAS  
has been satisfied. For the generic READ commands  
used in the following illustrations, Auto Precharge is  
disabled.  
2!3  
#!3  
7%  
!ꢂꢎ!ꢅ  
!ꢀꢂ  
#!  
%NABLE !0  
!0  
$ISABLE !0  
"! ꢒ "ANK ! RESS  
#! ꢒ #OLUMN ! RESS  
!0 ꢒ !UTO 0RECHARGE  
ꢒ $ONgT #ARE  
"!ꢂꢏ"!ꢀ  
"!  
Figure 11 READ Command  
#,+  
T$1:  
$1-  
T!#  
T,:  
T!#  
T/(  
T(:  
T/(  
$/ N  
$/ Nꢔꢀ  
$1  
ꢒ $ONgT #ARE  
Figure 12 Basic READ Timing Parameters for DQs  
Data Sheet  
17  
Rev. 1.11, 2007-01  
07142005-CR47-RB2E  
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