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HYE18L128160BC-7.5 参数 Datasheet PDF下载

HYE18L128160BC-7.5图片预览
型号: HYE18L128160BC-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用128兆移动-RAM [DRAMs for Mobile Applications 128-Mbit Mobile-RAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 55 页 / 1522 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L128160B[C/F]-7.5  
128-Mbit Mobile-RAM  
Functional DescriptionCommands  
The PRECHARGE command is used to deactivate (close) the open row in a particular bank or the open row in all  
banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE  
command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where  
only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t  
Care”.  
Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE  
commands being issued to that bank. A PRECHARGE command will be treated as a NOP if there is no open row  
in that bank, or if the previously open row is already in the process of precharging.  
2.4.8.1  
AUTO PRECHARGE  
Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but  
without requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction  
with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or  
WRITE command is automatically performed upon completion of the READ or WRITE burst. Auto Precharge is  
non persistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto  
Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue  
another command to the same bank until the precharge (tRP) is completed. This is determined as if an explicit  
PRECHARGE command was issued at the earliest possible time, as described for each burst type.  
Table 13  
Timing Parameters for PRECHARGE  
Parameter  
Symbol  
- 7.5  
Units  
ns  
Notes  
min.  
max.  
100k  
1)  
ACTIVE to PRECHARGE command period  
WRITE recovery time  
tRAS  
tWR  
tRP  
45  
14  
19  
ns  
ns  
PRECHARGE command period  
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:  
no. of clock cycles = specified delay / clock period; round up to next integer.  
2.4.8.2  
CONCURRENT AUTO PRECHARGE  
A READ or WRITE burst with Auto Precharge enabled can be interrupted by a subsequent READ or WRITE  
command issued to a different bank.  
Figure 37 shows a READ with Auto Precharge to bank n, interrupted by a READ (with or without Auto Precharge)  
to bank m. The READ to bank m will interrupt the READ to bank n, CAS latency later. The precharge to bank n  
will begin when the READ to bank m is registered.  
Figure 38 shows a READ with Auto Precharge to bank n, interrupted by a WRITE (with or without Auto Precharge)  
to bank m. The precharge to bank n will begin when the WRITE to bank m is registered. DQM should be pulled  
HIGH two clock cycles prior to the WRITE to prevent bus contention.  
Figure 39 shows a WRITE with Auto Precharge to bank n, interrupted by a READ (with or without Auto Precharge)  
to bank m. The precharge to bank n will begin tWR after the new command to bank m is registered. The last valid  
data-in to bank n is one clock cycle prior to the READ to bank m.  
Figure 40 shows a WRITE with Auto Precharge to bank n, interrupted by a WRITE (with or without Auto  
Precharge) to bank m. The precharge to bank n will begin tWR after the WRITE to bank m is registered. The last  
valid data-in to bank n is one clock cycle prior to the WRITE to bank m.  
Data Sheet  
35  
Rev. 1.71, 2007-01  
05282004-NZNK-8T0D  
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