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HYB39SC256800FE-6 参数 Datasheet PDF下载

HYB39SC256800FE-6图片预览
型号: HYB39SC256800FE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位同步DRAM [256-MBit Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 24 页 / 1319 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]39SC256[80/16]0F[E/F]  
256-MBit Synchronous DRAM  
1.2  
Description  
The  
Synchronous  
HY[B/I]39SC256[80/16]0F[E/F]  
are  
as 16 MBit  
four  
bank  
×8  
output circuits are synchronized with the positive edge of an  
externally supplied clock.  
DRAM’s  
organized  
and 8 Mbit x16 respectively. These synchronous devices  
achieve high speed data transfer rates for CAS latencies by  
employing a chip architecture that prefetches multiple bits  
and then synchronizes the output data to a system clock. The  
chip is fabricated with Qimonda advanced 0.11 µm 256-MBit  
DRAM process technology.  
Operating the four memory banks in an interleave fashion  
allows random access operation to occur at a higher rate than  
is possible with standard DRAMs. A sequential and gapless  
data rate is possible depending on burst length, CAS latency  
and speed grade of the device.  
Auto Refresh (CBR) and Self Refresh operation are  
supported. These devices operate with a single 3.3 V ± 0.3 V  
power supply. All 256-Mbit components are available in PG–  
TSOPII–54 and PG-TFBGA-54 packages.  
The device is designed to comply with all industry standards  
set for synchronous DRAM products, both electrically and  
mechanically. All of the control, address, data input and  
TABLE 2  
Ordering Information for RoHS Compliant Products  
Product Type1)  
Standard Operating Temperature (0 to 70 °C)  
Speed Grade  
Description  
Package  
Note  
2)  
HYB39SC256800FE-6  
HYB39SC256160FE-6  
HYB39SC256800FE-7  
HYB39SC256800FEH-7  
HYB39SC256160FE-7  
HYB39SC256160FEH-7  
HYB39SC256160FF-6  
HYB39SC256160FF-7  
HYB39SC256800FF-7  
PC166–333  
166MHz 16M ×8 SDRAM  
166MHz 8M ×16 SDRAM  
143MHz 16M ×8 SDRAM  
PG-TSOPII-54  
PC133–222  
143MHz 8M ×16 SDRAM  
2)  
PC166–333  
PC133–222  
166MHz 8M ×16 SDRAM  
143MHz 8M ×16 SDRAM  
143MHz 8M ×8SDRAM  
PG-TFBGA-54  
PG-TSOPII-54  
Industrial Operating Temperature (-40 to 85 °C)  
2)  
HYI39SC256800FE-6  
HYI39SC256160FE-6  
HYI39SC256800FE-7  
HYI39SC256160FE-7  
PC166–333  
166MHz 16M ×8 SDRAM  
166MHz 8M ×16 SDRAM  
143MHz 16M ×8 SDRAM  
143MHz 8M ×16 SDRAM  
PC133–222  
1) Please check with your Qimonda representative that leadtime and availability of your preferred device and version meet your project  
requirements.  
2) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Note: For product nomenclature see Chapter 6 of this data sheet  
Rev. 1.25, 2007-06  
4
03062006-NMGU-CQ9D