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HYB39S512160AT-7.5 参数 Datasheet PDF下载

HYB39S512160AT-7.5图片预览
型号: HYB39S512160AT-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位同步DRAM [512-Mbit Synchronous DRAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 21 页 / 1153 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[I/B]39S512[40/80/16]0A[E/T]  
512-Mbit Synchronous DRAM  
2
Configuration  
This chapter contains the pin configuration table and the TSOP package drawing.  
2.1  
Pin Configuration  
Listed below are the pin configurations sections for the various signals of the SDRAM.  
TABLE 3  
Ball Configuration of the SDRAM  
Ball No. Name Pin  
Buffer  
Function  
Type Type  
Clock Signals x4/ x8/ x16 Organization  
38  
37  
CLK  
CKE  
I
I
LVTTL  
LVTTL  
Clock Signal CLK  
Clock Enable  
Control Signals x4/ x8/ x16 Organization  
18  
17  
16  
19  
RAS  
CAS  
WE  
I
I
I
I
LVTTL  
LVTTL  
LVTTL  
LVTTL  
Row Address Strobe (RAS), Column Address Strobe (CAS), Write Enable (WE)  
CS  
Chip Select  
Address Signals x4/ x8/ x16 Organization  
20  
21  
23  
24  
25  
26  
29  
30  
31  
32  
33  
34  
22  
35  
36  
BA0  
BA1  
A0  
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
LVTTL  
Bank Address Signals 1:0  
Address Signal 9:0, Address Signal 10/Auto precharge  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
A9  
A10  
A11  
A12  
Rev. 1.52, 2007-06  
5
03292006-6Y91-0T2Z